IRG8CH37K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V 100A DIE
$0.00
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Reference Price (USD)
1,332+
$3.67033
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IRG8CH37K10F
$0.00
Product details
The IRG8CH37K10F from Infineon Technologies is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the IRG8CH37K10F ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the IRG8CH37K10F and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Discontinued at Digi-Key
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 35ns/190ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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