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IRG7CH81K10EF-R

Infineon Technologies
IRG7CH81K10EF-R Preview
Infineon Technologies
IGBT 1200V ULTRA FAST DIE
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Infineon Technologies IRG7CH81K10EF-R is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IRG7CH81K10EF-R

IRG7CH81K10EF-R

$0.00

Product details

The IRG7CH81K10EF-R by Infineon Technologies is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the IRG7CH81K10EF-R is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the IRG7CH81K10EF-R and experience unmatched performance. Contact us today for more details and pricing options.

General specs

  • Product Status: Obsolete
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 745 nC
  • Td (on/off) @ 25°C: 70ns/330ns
  • Test Condition: 600V, 150A, 1Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die

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